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click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. applicable directfet outline and substrate outline (see p.7,8 for details) directfet dual n-channel power mosfet fig 1. typical on-resistance vs. gate voltage fig 2. typical total gate charge vs gate-to-source voltage features and benefits environmentaly friendly product rohs compliant, halogen free dual common-drain n-channel mosfets provideshigh level of integration and very low rds(on) applications charge and discharge switch for battery application isolation switch for input power or battery application directfet isometric descriptionthe IRL6297SDpbf combines the latest hexfet? n-channel power mosfet silicon technology with the advanced directfet ? packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an so-8 and only 0.6 mm profile. the directfet ? package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods andprocesses. the directfet ? package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. sq sx st sa mq mx mt mp mc 0 1 2 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 0 5 10 15 20 t y p i c a l r d s ( o n ) ( m ? ) i d = 15a t j = 25c t j = 125c 0 1 02 03 04 05 06 07 0 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v v ds = 4.0v i d = 12a d d s g s g v dss v gs r ds(on) r ds(on) 20v max 12v max 3.8m ? @4.5v 5.4m ? @2.5v absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current max. 1258 140 12 2015 va q g tot q gd q gs2 q rr q oss v gs(th) 27nc 9.5nc 1.4nc 21nc 15nc 0.80v

form quantity IRL6297SDpbf directfet small can tape and reel 4800 IRL6297SDtrpbf base part number package type standard pack orderable part number downloaded from: http:///
IRL6297SDpbf

pulse width 400s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 6.1 CCC mv/c r ds ( on ) static drain-to-source on-resistance CCC 3.8 4.9 CCC 5.4 6.9 v gs ( th ) gate threshold voltage 0.50 0.80 1.10 v ? v gs(th) / ? t j gate threshold voltage coefficient CCC -4.1 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 60 CCC CCC s q g total gate charge CCC 54 CCC q g total gate charge CCC 27 CCC q gs1 pre- vth gate-to-source charge CCC 2.2 CCC v ds = 10v q gs2 post -vth gate-to-source charge CCC 1.4 CCC v gs = 4.5v q gd gate-to-drain charge CCC 9.5 CCC i d = 12a q g odr gate charge overdrive CCC 13.9 CCC see fi g .15 q sw switch charge (q gs2 + q gd ) CCC 10.9 CCC q oss output charge CCC 15 CCC nc r g gate resistance CCC 1.8 CCC ? t d( on) turn-on delay time CCC 8.8 CCC t r rise time CCC 29 CCC t d( off) turn-off delay time CCC 41 CCC t f fall time CCC 41 CCC c iss input capacitance CCC 2245 CCC c oss output capacitance CCC 610 CCC c rss reverse transfer capacitance CCC 395 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.2 v t rr reverse recovery time CCC 28 42 ns q rr reverse recovery charge CCC 21 32 nc ns pf a CCC CCC CCC CCC 25 140 a m ? na nc di/dt = 100 a/s t j = 25c, i s = 12a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 2.5v, i d = 12a t j = 25c, i f = 12a, v dd = 10v v gs = 0v v ds = 10v i d = 12a v dd = 10v, v gs = 4.5v v ds = v gs , i d = 35a v ds = 16 v, v gs = 0v v gs = 12v v gs = -12v mosfet symbol conditions v gs = 0v, i d = 250a reference to 25c, i d = 1.0ma v gs = 4.5v, i d = 15a v ds = 16v, v gs = 0v v ds = 16v, v gs = 0v, t j = 150c r g = 2.0 ? v ds = 10v, i d =12a conditions see fig.17 ? = 1.0mhz v ds = 10v, v gs = 10v, i d = 12a d s g downloaded from: http:///

IRL6297SDpbf fig 3. maximum effective transient thermal impedance, junction-to-ambient r is measured at t j of approximately 90c. surface mounted on 1 in. square cu board (still air).
with small clip heatsink (still air)
mounted on minimum footprint full size board with metalized back and with smallclip heatsink (still air) used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink. 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc absolute maximum ratin g s parameter units p d @t a = 25c power dissipation p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient CCC 72 r ja junction-to-ambient 12.5 CCC r ja junction-to-ambient 20 CCC c/w r jc junction-to-case , CCC 5.1 r j-pcb junction-to-pcb mounted 1.0 CCC linear derating factor w/c 0.014 270 -40 to + 150 max. 25 1.7 1.1 w c downloaded from: http:///
IRL6297SDpbf

fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = -8.5a v gs = -10v v gs = -4.5v 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 3.0v 2.6v 2.4v 2.2v bottom 2.0v 60s pulse width tj = 25c 2.0v 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 60s pulse width tj = 150c vgs top 10v 4.5v 3.5v 3.0v 2.6v 2.4v 2.2v bottom 2.0v 0 1 1 2 2 3 3 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = 10v 60s pulse width 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 i d , drain current (a) 3.0 4.0 5.0 6.0 7.0 8.0 9.0 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = 2.5v vgs = 3.5v vgs = 4.5v vgs = 6.0v vgs = 8.0v vgs = 10v vgs = 12v downloaded from: http:///

IRL6297SDpbf fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig 11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.1a 3.0a bottom 12a 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 35a i d = 250a i d = 1.0ma i d = 1.0a downloaded from: http:///
IRL6297SDpbf

fig 15a. gate charge test circuit fig 15b. gate charge waveform fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms fig 17a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as
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IRL6297SDpbf fig 18.
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! " code ab cd e f g h j k l m r p 0.016 0.0031 0.007 0.112 0.018 max 0.191 0.156 0.38 0.02 0.08 2.75 0.35 min 4.75 3.70 0.42 0.08 0.17 2.85 0.45 max 4.85 3.95 0.015 0.003 0.0008 0.108 0.014 min 0.146 0.187 metric imperial dimensions 0.041 0.085 0.020 0.95 2.05 0.48 1.05 2.15 0.52 0.081 0.037 0.019 0.68 0.72 0.83 0.87 0.034 0.033 0.028 0.027 0.020 0.48 0.52 0.019 j1 0.044 1.08 1.12 0.043 0.028 0.59 0.70 0.023 gate marking part number logo batch number date code line above the last character of the date code indicates "lead-free" downloaded from: http:///

3 IRL6297SDpbf qualification standards can be found at international rectifiers web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.

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loaded tape feed direction a e note: controlling dimensions in mm code a b c d e f g h f b c imperial min 0.311 0.154 0.469 0.215 0.158 0.197 0.059 0.059 max 8.10 4.10 12.30 5.55 4.20 5.20 n.c 1.60 min 7.90 3.90 11.90 5.45 4.00 5.00 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.165 0.205 n.c 0.063 d h g reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as IRL6297SDtrpbf). for 1000 parts on 7" reel, order IRL6297SDtr1pbf b c max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial h min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric g e f min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 tr1 option (qty 1000) max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial a d !" #$ !" "# $" %% &'(()))"*()&+" ( msl1 (per jedec j-std-020d ??? ) rohs compliant qualification information ? qualification level consumer ?? (per jedec jesd47f ??? guidelines) yes moisture sensitivity level directfet small can downloaded from: http:///

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